Electron Beam Lithography System

Mission

Our electron beam lithography system enables high-resolution nanofabrication for cutting-edge research in brain science and neurotechnology applications.

Summary

The EBL system provides nanometer-scale patterning capabilities with exceptional precision and flexibility for advanced device fabrication.

System Specifications

Electron Beam Lithography (EBL)

• eGun Type: Schottky Field Emission, Gaussian beam shape

• Acceleration Voltage: 50 kV

• Beam Current Range: 100 pA – 100 nA

  • Resolution: 8 nm
  • Overlay Accuracy: ±10 nm
  • Stitching Accuracy: ±10 nm
  • Maximum Field Size:
    • 2000 μm @ 25 kV
    • 1000 μm @ 50 kV
  • Maximum Sample Size: 200 mm

• Maskless Aligner:

  • Maximum Sample Size: 300 mm / 12 inch
  • Maximum Exposure Area: 290 mm × 290 mm
  • Resolution: ≤600 nm
  • Overlay Accuracy: 500 nm @ 200 mm
  • Light Source: 375 nm / 405 nm